Model

Brand SAMSUNG

Series 983 DCT

Model MZ-1LB1T9NE

Details

Form Factor M.222110

Capacity 1.9TB

Memory Components V-NAND3-bit MLC

Interface PCIeGen 3.0 x4, NVMe 1.2b

Controller SamsungPhoenix Controller

Cache Samsung 3GBLow Power DDR4 SDRAM

Performance

Max Sequential Read Upto 3000 MBps

Max Sequential Write Upto 1430 MBps

4KB Random Read Upto 480,000 IOPS

4KB Random Write Upto 42,000 IOPS

MTBF 2,000,000 hours

Features

Features U.2Form Factor and Non-Volatile Memory Express (NVMe)

Advanced ECC Engine and End-to-End Data Protection

Power-Loss Protection

V-NAND Technology

Sustained Performance

High Quality of Service (QoS)

S.M.A.R.T.

Dynamic Thermal Guard Protection

Environmental

Power Consumption (Idle) Max.2.6W

Power Consumption (Active) Read/Write:7.6W/8.0W

Operating Temperature 0°C~ +70°C

Max Shock Resistance 1,500G& 0.5 ms (Half sine)